IS62WV5128ALL IS62WV5128BLL (R) 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES Long-term Support World Class Quality NOVEMBER 2016 DESCRIPTION The ISSI IS62WV5128ALL / IS62WV5128BLL are high- * High-speed access time: 55ns, 70ns speed, 4M bit static RAMs organized as 512K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. * CMOS low power operation 36 mW (typical) operating 9 W (typical) CMOS standby * TTL compatible interface levels When CS1 is HIGH (deselected) the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. * Single power supply 1.65V - 2.2V Vdd (IS62WV5128ALL) 2.5V - 3.6V Vdd (IS62WV5128BLL) * Fully static operation: no clock or refresh required * Three state outputs * Industrial temperature available Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62WV5128ALL and IS62WV5128BLL are packaged in the JEDEC standard 32-pin TSOP (TYPE I), 32-pin sTSOP (TYPE I), 32-pin TSOP (Type II), 32-pin SOP and 36-pin mini BGA. * Lead-free available FUNCTIONAL BLOCK DIAGRAM A0-A18 DECODER 512K x 8 MEMORY ARRAY VDD GND I/O DATA CIRCUIT I/O0-I/O7 CS1 OE COLUMN I/O CONTROL CIRCUIT WE Copyright (c) 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. -- www.issi.com Rev. E1 11/1/2016 1 (R) IS62WV5128ALL, IS62WV5128BLL Long-term Support World Class Quality PIN DESCRIPTIONS A0-A18 Address Inputs CS1 Chip Enable 1 Input OE Output Enable Input WE Write Enable Input I/O0-I/O7 Input/Output NC No Connection Vdd Power GND Ground 36-pin mini BGA (B) (6mm x 8mm) (Package Code B) 2 1 2 3 4 5 6 A A0 A1 NC A3 A6 A8 B I/O4 A2 WE A4 A7 I/O0 C I/O5 NC A5 D GND VDD E VDD GND F I/O6 G I/O7 H A9 I/O1 A18 A17 I/O2 OE CS1 A16 A15 I/O3 A10 A11 A12 A13 A14 Integrated Silicon Solution, Inc. -- www.issi.com Rev. E1 11/1/16 (R) IS62WV5128ALL, IS62WV5128BLL Long-term Support World Class Quality PIN DESCRIPTIONS A0-A18 Address Inputs CS1 Chip Enable 1 Input OE Output Enable Input WE Write Enable Input I/O0-I/O7 Input/Output Vdd Power GND Ground PIN CONFIGURATION 32-pin TSOP (TYPE I), (Package Code T) 32-pin sTSOP (TYPE I) (Package Code H) A11 A9 A8 A13 WE A18 A15 VDD A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CS1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 Integrated Silicon Solution, Inc. -- www.issi.com Rev. E1 11/1/16 32-pin SOP (Package Code Q) 32-pin TSOP (TYPE II) (Package Code T2) A17 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VDD A15 A18 WE A13 A8 A9 A11 OE A10 CS1 I/O7 I/O6 I/O5 I/O4 I/O3 3 (R) IS62WV5128ALL, IS62WV5128BLL Long-term Support World Class Quality OPERATING RANGE (Vdd) Range Commercial Industrial Ambient Temperature 0C to +70C -40C to +85C IS62WV5128ALL 1.65V - 2.2V 1.65V - 2.2V IS62WV5128BLL 2.5V - 3.6V 2.5V - 3.6V ABSOLUTE MAXIMUM RATINGS(1) Symbol Vterm Vdd Tstg Parameter Terminal Voltage with Respect to GND Vdd Related to GND Storage Temperature Pt Power Dissipation Value -0.2 to Vdd+0.3 -0.2 to Vdd+0.3 -65 to +150 Unit V V C 1.0 W Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol Parameter Test Conditions Voh Output HIGH Voltage Ioh = -0.1 mA Ioh = -1 mA Vol Output LOW Voltage Iol = 0.1 mA Iol = 2.1 mA Vih Input HIGH Voltage Vil(1) Input LOW Voltage Ili Ilo Input Leakage Output Leakage Vdd 1.65-2.2V 2.5-3.6V 1.65-2.2V 2.5-3.6V 1.65-2.2V 2.5-3.6V 1.65-2.2V 2.5-3.6V GND Vin Vdd GND Vout Vdd, Outputs Disabled Min. 1.4 2.2 -- -- 1.4 2.2 -0.2 -0.2 -1 -1 Max. -- -- 0.2 0.4 Vdd + 0.2 Vdd + 0.3 0.4 0.6 1 1 Unit V V V V V V V V A A Notes: 1. Vil (min.) = -1.0V for pulse width less than 10 ns. 4 Integrated Silicon Solution, Inc. -- www.issi.com Rev. E1 11/1/16 (R) IS62WV5128ALL, IS62WV5128BLL Long-term Support World Class Quality CAPACITANCE(1) Symbol Cin Cout Parameter Input Capacitance Input/Output Capacitance Conditions Vin = 0V Vout = 0V Max. 8 10 Unit pF pF Note: 1. Tested initially and after any design or process changes that may affect these parameters. AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load R1() R2() Vref Vtm IS62WV5128ALL 1.65 - 2.2V 3070 3150 0.9V 1.8V IS62WV5128ALL (Unit) 0.4V to Vdd-0.2V 5 ns IS62WV5128BLL (Unit) 0.4V to Vdd-0.3V 5ns Vref Vref See Figures 1 and 2 See Figures 1 and 2 IS62WV5128BLL 2.5V - 3.6V 3070 3150 1.5V 2.8V AC TEST LOADS R1 R1 VTM VTM OUTPUT OUTPUT 30 pF Including jig and scope Figure 1 Integrated Silicon Solution, Inc. -- www.issi.com Rev. E1 11/1/16 5 pF Including jig and scope R2 R2 Figure 2 5 (R) IS62WV5128ALL, IS62WV5128BLL Long-term Support World Class Quality POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) 62WV5128ALL (1.65V - 2.2V) Symbol Parameter Icc Vdd Dynamic Operating Supply Current Icc1 Operating Supply Current Isb1 TTL Standby Current (TTL Inputs) Isb2 CMOS Standby Current (CMOS Inputs) Test Conditions Vdd = Max., Iout = 0 mA, f = fmax Max. Unit 70 ns Com. 25 mA Ind. 30 Vdd = Max., CS1 = 0.2VCom. 10 mA WE = Vdd-0.2V Ind. 10 f=1mhz Vdd = Max., Com. 0.35 mA Vin = Vih or Vil Ind. 0.35 CS1 = Vih, f = 1 MHz Vdd = Max., Com. CS1 Vdd - 0.2V, Ind. Vin Vdd - 0.2V, or Vin 0.2V, f = 0 15 A 15 Note: 1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) 62WV5128BLL (2.5V - 3.6V) Symbol Icc Parameter Test Conditions Vdd Dynamic Operating Supply Current Vdd = Max., Iout = 0 mA, f = fmax Icc1 Operating Supply Current Isb1 TTL Standby Current (TTL Inputs) Isb2 CMOS Standby Current (CMOS Inputs) Com. Ind. Vdd = Max., CS1 = 0.2V Com. WE = Vdd-0.2V Ind. f=1mhz Vdd = Max., Com. Vin = Vih or Vil Ind. CS1 = Vih, f = 1 MHz Vdd = Max., CS1 Vdd - 0.2V, Vin Vdd - 0.2V, or Vin 0.2V, f = 0 Com. Ind. Max. Unit 55 ns 40 mA 45 15 15 mA 0.35 mA 0.35 15 15 A Note: 1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 6 Integrated Silicon Solution, Inc. -- www.issi.com Rev. E1 11/1/16 (R) IS62WV5128ALL, IS62WV5128BLL Long-term Support World Class Quality READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol trc taa toha tacs1 tdoe thzoe(2) tlzoe(2) thzcs1 tlzcs1 Parameter Read Cycle Time Address Access Time Output Hold Time CS1 Access Time OE Access Time OE to High-Z Output OE to Low-Z Output CS1 to High-Z Output CS1 to Low-Z Output 55 ns Min. Max. 55 -- -- 55 10 -- -- 55 -- 25 -- 20 5 -- 0 20 10 -- 70 ns Min. 70 -- 10 -- -- -- 5 0 10 Max. -- 70 -- 70 35 25 -- 25 -- Unit ns ns ns ns ns ns ns ns ns Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4 to Vdd-0.2V/Vdd-0.3V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100% tested. AC WAVEFORMS READ CYCLE NO. 1(1,2) (Address Controlled) (CS1 = OE = Vil, WE = Vih) tRC ADDRESS tAA tOHA DOUT PREVIOUS DATA VALID Integrated Silicon Solution, Inc. -- www.issi.com Rev. E1 11/1/16 tOHA DATA VALID 7 (R) IS62WV5128ALL, IS62WV5128BLL Long-term Support World Class Quality AC WAVEFORMS READ CYCLE NO. 2(1,3) (CS1, OE Controlled) tRC ADDRESS tAA tOHA OE tDOE CS1 tHZOE tLZOE tACS1 tLZCS1 DOUT HIGH-Z tHZCS DATA VALID Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CS1= Vil. WE=Vih. 3. Address is valid prior to or coincident with CS1 LOW transition. 8 Integrated Silicon Solution, Inc. -- www.issi.com Rev. E1 11/1/16 (R) IS62WV5128ALL, IS62WV5128BLL Long-term Support World Class Quality WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range) 55 ns 70 ns Symbol Parameter Min. Max. Min. Max. Unit twc Write Cycle Time 55 -- 70 -- ns tscs1 CS1 to Write End 45 -- 60 -- ns taw Address Setup Time to Write End 45 -- 60 -- ns tha Address Hold from Write End 0 -- 0 -- ns tsa Address Setup Time 0 -- 0 -- ns tpwe WE Pulse Width 40 -- 50 -- ns tsd Data Setup to Write End 25 -- 30 -- ns thd Data Hold from Write End 0 -- 0 -- ns thzwe(3) WE LOW to High-Z Output -- 20 -- 20 ns (3) tlzwe WE HIGH to Low-Z Output 5 -- 5 -- ns Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4V to Vdd-0.2V/Vdd-0.3V and output loading specified in Figure 1. 2. The internal write time is defined by the overlap of CS1 LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write. 3. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100% tested. AC WAVEFORMS WRITE CYCLE NO. 1 (CS1 Controlled, OE = HIGH or LOW) tWC ADDRESS tHA tSCS1 CS1 tAW tPWE WE tSA DOUT tHZWE DATA UNDEFINED tLZWE HIGH-Z tSD DIN Integrated Silicon Solution, Inc. -- www.issi.com Rev. E1 11/1/16 tHD DATA-IN VALID 9 (R) IS62WV5128ALL, IS62WV5128BLL Long-term Support World Class Quality WRITE CYCLE NO. 2 (WE Controlled: OE is HIGH During Write Cycle) tWC ADDRESS OE tHA tSCS1 CS1 tAW tPWE WE tSA DOUT tHZWE tLZWE HIGH-Z DATA UNDEFINED tSD DIN tHD DATA-IN VALID WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle) tWC ADDRESS OE tHA tSCS1 CS1 tAW tPWE WE tSA DOUT DATA UNDEFINED tHZWE tLZWE HIGH-Z tSD DIN 10 tHD DATA-IN VALID Integrated Silicon Solution, Inc. -- www.issi.com Rev. E1 11/1/16 (R) IS62WV5128ALL, IS62WV5128BLL Long-term Support World Class Quality DATA RETENTION SWITCHING CHARACTERISTICS Symbol Vdr Idr tsdr trdr Parameter Vdd for Data Retention Data Retention Current Data Retention Setup Time Recovery Time Test Condition See Data Retention Waveform Vdd = 1.2V, CS1 Vdd - 0.2V See Data Retention Waveform See Data Retention Waveform Min. 1.2 -- 0 trc Max. 3.6 15 -- -- Unit V A ns ns DATA RETENTION WAVEFORM (CS1 Controlled) tSDR Data Retention Mode tRDR VDD VDR CS1 GND CS1 VDD Integrated Silicon Solution, Inc. -- www.issi.com Rev. E1 11/1/16 - 0.2V 11 (R) IS62WV5128ALL, IS62WV5128BLL Long-term Support World Class Quality ORDERING INFORMATION IS62WV5128ALL (1.65V-2.2V) Industrial Range: -40C to +85C Speed (ns) 70 Order Part No. IS62WV5128ALL-70BI Package mini BGA (6mmx8mm) ORDERING INFORMATION IS62WV5128BLL (2.5V - 3.6V) Industrial Range: -40C to +85C Speed (ns) 55 55 55 55 55 55 12 Order Part No. IS62WV5128BLL-55TLI IS62WV5128BLL-55QLI IS62WV5128BLL-55T2LI IS62WV5128BLL-55HLI IS62WV5128BLL-55BI IS62WV5128BLL-55BLI Package TSOP, TYPE I, Lead-free SOP, Lead-free TSOP, TYPE II, Lead-free sTSOP, TYPE I, Lead-free mini BGA (6mmx8mm) mini BGA (6mmx8mm), Lead-free Integrated Silicon Solution, Inc. -- www.issi.com Rev. E1 11/1/16 (R) IS62WV5128ALL, IS62WV5128BLL Long-term Support World Class Quality Integrated Silicon Solution, Inc. -- www.issi.com 13 Rev. E1 11/1/16 (R) IS62WV5128ALL, IS62WV5128BLL 14 Long-term Support World Class Quality Integrated Silicon Solution, Inc. -- www.issi.com Rev. E1 11/1/16 (R) IS62WV5128ALL, IS62WV5128BLL Long-term Support World Class Quality Integrated Silicon Solution, Inc. -- www.issi.com 15 Rev. E1 11/1/16 (R) IS62WV5128ALL, IS62WV5128BLL 16 Long-term Support World Class Quality Integrated Silicon Solution, Inc. -- www.issi.com Rev. E1 11/1/16 (R) IS62WV5128ALL, IS62WV5128BLL NOTE : 08/12/2008 1. CONTROLLING DIMENSION : MM . 2. Reference document : JEDEC MO-207 Package Outline Integrated Silicon Solution, Inc. -- www.issi.com Rev. E1 11/1/16 Long-term Support World Class Quality 17